Drain / substrate coupling impact on DIBL of Ultra Thin Body and BOX SOI MOSFETs with undoped channel

@article{Burignat2009DrainS,
  title={Drain / substrate coupling impact on DIBL of Ultra Thin Body and BOX SOI MOSFETs with undoped channel},
  author={St{\'e}phane Burignat and M. K. Md Arshad and J.-P. Raskin and Valeriya Kilchytska and Denis Flandre and Olivier Faynot and P. Scheiblin and F. th cent Andrieu},
  journal={2009 Proceedings of the European Solid State Device Research Conference},
  year={2009},
  pages={141-144}
}
For ultimate MOSFET scaling, Ultra Thin Body and BOX SOI transistors have become of great interest, as they are known to dramatically reduce Short Channel Effects (SCE) while maintaining very high device performance. In this work, we emphasize the impact of the substrate / BOX interface space charge conditions on the Drain Induced Barrier Lowering (DIBL) increase with gate length reduction, as this drastically changes the channel position in the film and the drain coupling with the channel via… CONTINUE READING