Double snapback effect in LDMOS based on non-isothermal simulation

@article{Shan2011DoubleSE,
  title={Double snapback effect in LDMOS based on non-isothermal simulation},
  author={Hui Min Shan and Jianbao Xia and Xiangdong Luo and Yu-feng Guo},
  journal={2011 International Conference on Electric Information and Control Engineering},
  year={2011},
  pages={2121-2124}
}
This paper reports a novel effect in Lateral Diffused MOS (LDMOS) transistors—double snapback effect. Based on non-isothermal simulation, we find the IV characteristic of LDMOS exhibits twice snapbacks phenomenon. TCAD tools are employed to investigate the physical mechanism of the double snapback phenomenon. The results show that the first snapback is a… CONTINUE READING