Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

@article{Balestra1987DoublegateST,
  title={Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance},
  author={F. Balestra and S. Cristoloveanu and M. Benachir and J. Brini and T. Elewa},
  journal={IEEE Electron Device Letters},
  year={1987},
  volume={8},
  pages={410-412}
}
  • F. Balestra, S. Cristoloveanu, +2 authors T. Elewa
  • Published 1987
  • Materials Science
  • IEEE Electron Device Letters
  • The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion. This original method of transistor operation offers excellent device performance, in particular great increases in subthreshold slope, transconductance, and drain current. A simulation program and experiments on SIMOX structures are used to study the new device. 
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