Double-gate fully-depleted SOI transistors for low-power high-performance nano-scale circuit design

Abstract

Double-gate fully-depleted (DGFD) SOI circuits are regarded as the next generation VLSI circuits. This paper investigates the impact of scaling on the demand and challenges of DGFD SOI circuit design for low power and high performance. We study how the added back-gate capacitance affects the circuit power and performance; how to trade off the enhanced short… (More)
DOI: 10.1145/383082.383136

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