Double gate-MOSFET subthreshold circuit for ultralow power applications

@article{Kim2004DoubleGS,
  title={Double gate-MOSFET subthreshold circuit for ultralow power applications},
  author={Jae-Joon Kim and Kaushik Roy},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={1468-1474}
}
In this paper, we propose MOSFETs that are suitable for subthreshold digital circuit operations. The MOSFET subthreshold circuit would use subthreshold leakage current as the operating current to achieve ultralow power consumption when speed is not of utmost importance. We derive the theoretical limit of delay and energy consumption in MOSFET subthreshold circuit, and show that devices that have an ideal subthreshold slope are optimal for subthreshold operations due to the smaller gate… CONTINUE READING
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