Double correlation technique (DDLTS) for the analysis of deep level profiles in GaAs and GaAs0.6P0.4

@article{Lefvre1977DoubleCT,
  title={Double correlation technique (DDLTS) for the analysis of deep level profiles in GaAs and GaAs0.6P0.4},
  author={Herv{\'e} C. Lef{\`e}vre and M. Schulz},
  journal={IEEE Transactions on Electron Devices},
  year={1977},
  volume={24},
  pages={973-978}
}
A very sensitive measurement technique is presented which can be applied to determine deep level profiles in space charge layers of Schottky barriers and p-n junctions of devices. The method uses a transient capacitance technique with correlation similar to Lang's DLTS (Deep Level Transient Spectroscopy). The DLTS technique is extended to double correlation DDLTS by relating the transient capacitance signals of two pulses, having different amplitudes, to reduce the measurement noise and to… CONTINUE READING