Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric

@article{Boucart2006DoubleGT,
  title={Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric},
  author={Kathy Boucart and A. M. Ionescu},
  journal={2006 European Solid-State Device Research Conference},
  year={2006},
  pages={383-386}
}
In this paper we propose a novel design for a double gate tunnel field effect transistor (DG TFET), for which the simulations show significant improvements compared with single gate devices with a SiO 2 gate dielectric. For the first time, double gate devices using a high-K gate dielectric are explored, showing on-current as high as 1 mA for a gate voltage of 1.2 V, reduced off-current as low as 0.1 fA, improved average subthreshold swing of 52 mV/decade, and a minimum point slope of 18 mV… CONTINUE READING

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