Dose Designing and Fabrication of 4H-SiC Double RESURF MOSFETs

Abstract

Designing and fabrication of 4H-SiC (0001) lateral MOSFETs with a double reduced surface field (RESURF) structure have been investigated to reduce a drift resistance. In order to achieve high breakdown voltage, a two-zone RESURF structure was also employed in addition to the double RESURF structure. After device simulation for dose optimization, 4H-SiC two… (More)

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4 Figures and Tables