Doping compensation for increased robustness of fast recovery silicon diodes


0026-2714/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.microrel.2009.09.014 * Corresponding author. Address: ABB Switzerland kstrasse 3, Lenzburg CH-5600, Switzerland. Tel.: +41 5 1309. E-mail addresses:, vobeck High-power diodes with the radiation enhanced diffusion (RED) of Pd are shown to have much higher ruggedness during… (More)
DOI: 10.1016/j.microrel.2009.09.014


9 Figures and Tables