Doping compensation for increased robustness of fast recovery silicon diodes

Abstract

0026-2714/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.microrel.2009.09.014 * Corresponding author. Address: ABB Switzerland kstrasse 3, Lenzburg CH-5600, Switzerland. Tel.: +41 5 1309. E-mail addresses: jan.vobecky@ch.abb.com, vobeck High-power diodes with the radiation enhanced diffusion (RED) of Pd are shown to have much higher ruggedness during… (More)
DOI: 10.1016/j.microrel.2009.09.014

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9 Figures and Tables