Doping Profile Effects on Device Characteristics of Nano-Scale MOSFETs

  • H. Takeda, N. Mori
  • Published 2005 in
    2005 International Conference On Simulation of…

Abstract

We have numerically simulated device characteristics of sub-10 nm gate length bulk n-MOSFETs with various doping profiles, using a quantum transport simulator based on a non-equilibrium Green's function method. Comparing the simulated results, we study effects of the doping profile on the device characteristics. The simulation study reveals that the off-set… (More)

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Cite this paper

@article{Takeda2005DopingPE, title={Doping Profile Effects on Device Characteristics of Nano-Scale MOSFETs}, author={H. Takeda and N. Mori}, journal={2005 International Conference On Simulation of Semiconductor Processes and Devices}, year={2005}, pages={247-250} }