Dopant tracing of terrace growth in GaAs LPE layers

@inproceedings{Fischer1978DopantTO,
  title={Dopant tracing of terrace growth in GaAs LPE layers},
  author={Baruch Fischer and Elisabeth Dr Bauser and Philip A. Sullivan and Daniel Leon Rode},
  year={1978}
}
Growth terraces on the surface of GaAs liquid phase epitaxial layers leave behind traces of increased doping concentration in the interior of the layer. These traces have been observed on (110) cleavage planes perpendicular to the (100) surface. Spatially resolved photoluminescence, cathodoluminescence, and photoetching have been applied to reveal the traces of the terraces. A fine structure on the photoetched cleavage plane indicates that the increase of thickness of the layer is caused in… CONTINUE READING