Dopant-induced stabilization of silicon clusters at finite temperature

@inproceedings{Zorriasatein2007DopantinducedSO,
  title={Dopant-induced stabilization of silicon clusters at finite temperature},
  author={Shahab Zorriasatein and Kavita Joshi and Dilip Kanhere},
  year={2007}
}
With the advances in miniaturization, understanding and controlling properties of significant technological systems like silicon in nano regime assumes considerable importance. It turns out that small silicon clusters in the size range of 15-20 atoms are unstable upon heating and in fact fragment in the temperature range of 1200 K to 1500 K. In the present work we demonstrate that it is possible to stabilize such clusters by introducing appropriate dopant (in this case Ti). Specifically, by… CONTINUE READING

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