Donors and deep acceptors in β-Ga2O3

@article{Neal2018DonorsAD,
  title={Donors and deep acceptors in $\beta$-Ga2O3},
  author={Adam T. Neal and Shin Mou and Subrina Rafique and Hongping Zhao and Elaheh Ahmadi and James. S. Speck and Kevin T. Stevens and J. D. Blevins and Darren B. Thomson and Neil A. Moser and Kelson D. Chabak and Gregg H. Jessen},
  journal={Applied Physics Letters},
  year={2018}
}
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed, Czochralski, molecular beam epitaxy, and low pressure chemical vapor deposition. Through simultaneous, self-consistent fitting of the temperature dependent carrier density and mobility, we are able to accurately estimate the donor energy of Si and Ge to be 30… 

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