Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs

The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail. The depletion of 2DEG by the donor-like surface states is shown. The drain current collapse is found to be more sensitive to the addition of positive surface charges… CONTINUE READING