Domain Switching Dynamics in Ferroelectric Ultrathin Film: Fundamental Thickness Limit for FeRAM Application

Abstract

Ferroelectric (FE) thin films have been used in numerous applications, including FE random access memories (FeRAM) and FE field effect transistors. As the devices become smaller, the required FE films should become thinner. The ultimate size of such miniaturization will depend on how thin the films can be made without losing their required FE properties… (More)

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