Distribution pattern and allocation of defects in hydrogenated ZnO thin films.


A polycrystalline ZnO thin film prepared by atomic layer deposition was annealed in hydrogen at 10 bar and 350-450 °C. Hydrogenation induced simultaneous formation of oxygen and zinc vacancies whose concentrations were closely related to the temperature of treatment. Spatial distributions of these defects were analyzed by photoluminescence confocal mapping… (More)
DOI: 10.1039/c6cp01768a


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