Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

@inproceedings{Argunova2017DistributionOD,
  title={Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates},
  author={Tatiana S. Argunova and Mikhail Yu. Gutkin and Jung Ho Je and A. E. Kalmykov and O. P. Kazarova and Evgeniy N. Mokhov and K. N. Mikaelyan and A. V. Myasoedov and Lev M. Sorokin and Kirill Shcherbachev},
  year={2017}
}
To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective. The quality of AlN could be improved by eliminating the substrate during the layer growth. In this paper, we demonstrate freestanding AlN layers fabricated by an SiC substrate evaporation method. Such layers were used to investigate dislocation… CONTINUE READING

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