Displacement damage effects in silicon MEMS at high proton doses

@inproceedings{Gomes2011DisplacementDE,
  title={Displacement damage effects in silicon MEMS at high proton doses},
  author={Jo{\~a}o Duarte Gomes and Herbert R Shea},
  year={2011}
}
We report on a study of the sensitivity of silicon MEMS to proton radiation and mitigation strategies. MEMS can degrade due to ionizing radiation (electron-hole pair creation) and non-ionizing radiation (displacement damage), such as electrons, trapped and solar protons, or cosmic rays, typically found in a space environment. Over the past few years there has been several reports on the effects of ionizing radiation in silicon MEMS, with failure generally linked to trapped charge in dielectrics… CONTINUE READING
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