Displacement damage analysis of single-junction and triple-junction GaAs solar cells induced by electron irradiation

Abstract

Space-graded single-junction (SJ) and triple-junction (TJ) GaAs solar cells, produced by MOCVD, are evaluated through electron-irradiation at the energy of 1MeV, 1.5MeV and 2MeV to compare radiation effects of electrons on these solar cells, and also to provide experimental data for predictions of the cell performances in space. Mean degradations of the… (More)

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