Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

@inproceedings{Rossi2016DispersiveRO,
  title={Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor},
  author={A Rossi and Ran Zhao and Andrew Dzurak and M. Fernando Gonzalez-Zalba},
  year={2016}
}
  • A Rossi, Ran Zhao, +1 author M. Fernando Gonzalez-Zalba
  • Published 2016
  • Physics
  • Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the… CONTINUE READING

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