Disordered electrical potential observed on the surface of SiO2 by electric field microscopy.


The electrical potential on the surface of ∼300 nm thick SiO(2) grown on single-crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to ∼0.4 V within regions of 1 µm. The potential fluctuations observed at the surface of these… (More)
DOI: 10.1088/0953-8984/22/4/045002

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