Disorder driven metal-insulator transition in BaPb(1-x)Bi(x)O₃ and inference of disorder-free critical temperature.

@article{Luna2014DisorderDM,
  title={Disorder driven metal-insulator transition in BaPb(1-x)Bi(x)O₃ and inference of disorder-free critical temperature.},
  author={Katherine Luna and Paula Giraldo-Gallo and Theodore H. Geballe and Ian R Fisher and Malcolm R. Beasley},
  journal={Physical review letters},
  year={2014},
  volume={113 17},
  pages={177004}
}
We performed point-contact spectroscopy tunneling measurements on single crystal BaPb(1-x)Bi(x)O(3) for 0≤x≤0.28 at temperatures T=2-40  K and find a suppression in the density of states at low bias voltages that is characteristic of disordered metals. Both the correlation gap and the zero-temperature conductivity are zero at a critical concentration x(c)=0.30. Not only does this suggests that a disorder driven metal-insulator transition occurs before the onset of the charge disproportionated… CONTINUE READING

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