Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

Abstract

InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with an almost etching-pit-free surface do not require complex intermediate-layer epitaxial growth processes and large thickness typically required for conventional epitaxial growth.

DOI: 10.1186/1556-276X-7-642

Extracted Key Phrases

4 Figures and Tables

Cite this paper

@inproceedings{Hsu2012DislocationRO, title={Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy}, author={Chao-Wei Hsu and Yung-Feng Chen and Yan-Kuin Su}, booktitle={Nanoscale research letters}, year={2012} }