Direct x-ray imaging system using an amplified metal-oxide-semiconductor imager in the 4-13-nm wavelength region.

Abstract

We describe a direct x-ray imaging system that uses an amplified metal-oxide-semiconductor imager to detect soft x rays directly for real-time imaging. From the absolute sensitivity of this system as measured through the use of a monochromatic synchrotron radiation beam and a GaAsP Schottky-type photodiode, the minimum sensitivity at a wavelength of 13 nm was estimated to be greater than 10(8)photons mm(-2). This is sufficient to detect soft x rays directly for real-time imaging. Onion cell observations at wavelengths of 4.3 and 4.6 nm indicate that x-ray absorption by the carbon in the cells was detected. This is a promising imaging system for the soft x-ray region in which conventional CCD's are difficult to use.

DOI: 10.1364/AO.34.006527

Cite this paper

@article{Haga1995DirectXI, title={Direct x-ray imaging system using an amplified metal-oxide-semiconductor imager in the 4-13-nm wavelength region.}, author={Tatsuya Haga and Hiroyuki Kinoshita}, journal={Applied optics}, year={1995}, volume={34 28}, pages={6527-32} }