Direct two-dimensional electrostatic potential cross-sectional mapping of sub-30-nm MOSFET under operation mode using electron holography

@article{Ikarashi2011DirectTE,
  title={Direct two-dimensional electrostatic potential cross-sectional mapping of sub-30-nm MOSFET under operation mode using electron holography},
  author={N. Ikarashi and Hiroshi Takeda and Koichi Yako and Masami Hane},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={6.2.1-6.2.4}
}
Electron holography (EH) cross-sectional observations were used to delineate terminal-voltage induced changes in an electrostatic potential distribution in a MOSFET under operating conditions. Gate and drain voltages were applied to a 25-nm-gate-length MOSFET during EH observations to investigate how the terminal-voltage application changed the potential… CONTINUE READING