Direct measurements, analysis, and post-fabrication improvement of noise margins in SRAM cells utilizing DMA SRAM TEG

@article{Suzuki2010DirectMA,
  title={Direct measurements, analysis, and post-fabrication improvement of noise margins in SRAM cells utilizing DMA SRAM TEG},
  author={Muneyasu Suzuki and Takura Saraya and Ken Shimizu and Akio Nishida and Shiro Kamohara and Kiyoshi Takeuchi and Satoshi Miyano and Takeshi Sakurai and Toshiro Hiramoto},
  journal={2010 Symposium on VLSI Technology},
  year={2010},
  pages={191-192}
}
A special device-matrix-array (DMA) TEG of 16k bit SRAM cells has been designed. Static noise margins (SNM) and 6 transistors in cells are directly measured and their fluctuations are examined. It is found for the first time that one-side SNM follows the normal distribution up to ±4σ. It is also found that the cell stability is worse than circuit simulation using Vth of measured 6 transistors. Furthermore, the post-fabrication self-convergence scheme by NBTI stress is applied to DMA SRAM TEG… CONTINUE READING

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