Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop.

@article{Iveland2013DirectMO,
  title={Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop.},
  author={Justin Iveland and Lucio Martinelli and Jacques Peretti and James S. Speck and Claude Weisbuch},
  journal={Physical review letters},
  year={2013},
  volume={110 17},
  pages={177406}
}
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear… CONTINUE READING
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