• Physics
• Published 1993
• DOI:10.1006/spmi.1993.1122

Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures

@inproceedings{Soref1993DirectgapGA,
  title={Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures},
  author={Richard A. Soref and Lionel Robert Friedman},
  year={1993}
}

• Richard A. Soref, Lionel Robert Friedman

Abstract A theoretical proposal is given for creating direct-gap semiconductor layers in silicon-based Group IV heterostructures. Based upon recent bandstructure calculations for pseudomorphic Ge/GeSi and GeSi/Ge, we predict a strain-induced Γc-Lc direct-gap crossover (λg ∼ 2.2 μm) in tensile Ge/Ge0.87Sn0.13 and in compressive Ge0.98Sn0.02/Ge. We used linear extrapolation of band-edge curves. The direct-gap structures are potentially useful in laser diodes, electrooptic modulators, and… CONTINUE READING

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