Direct extraction of non-linear intrinsic transistor behaviour from large signal waveform measurement data

@article{Demmler1996DirectEO,
  title={Direct extraction of non-linear intrinsic transistor behaviour from large signal waveform measurement data},
  author={M. Demmler and P. J. Tasker and Michael Schlechtweg and A Huilsmann},
  journal={1996 26th European Microwave Conference},
  year={1996},
  volume={1},
  pages={256-259}
}
Based on a vector corrected large signal RF waveform measurement system, analysis techniques have been developed that allow for the direct determination of the intrinsic dynamic 1-V and gate diode characteristics. A key feature of these analysis techniques is that the analysis is performed directly on measured waveform data without using any non-linear model in advance, as in previous works. Investigations have shown that the gate diode characteristic extracted under RF operation conditions is… CONTINUE READING

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