Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides
@article{Buyanova2004DirectEE, title={Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides}, author={Irina A. Buyanova and Morteza Izadifard and Ivan G. Ivanov and Jens Birch and Weimin M. Chen and Marco Felici and Antonio Polimeni and M. Capizzi and Y. G. Hong and Huoping Xin and Charles W. Tu}, journal={Physical Review B}, year={2004}, volume={70}, pages={245215-245219} }
Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excita ...
19 Citations
Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys
- Materials Science
- 2006
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Effect of postgrowth hydrogen treatment on defects in GaNP
- Materials Science
- 2011
Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present…
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- Physics, Materials Science
- 2020
Dilute-N GaPAsN alloys have great potential for optoelectronics lattice-matched to Si. However, there is a lack of systematic calculation of the optical response of these alloys. The present paper…
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- Materials Science
- 2020
III–V/Si integration is one of the bottlenecks of modern semiconductor technology. Dilute nitride phosphides (III–P–N) are among the promising materials providing lattice matching with Si. In this…
Hydrogen limited nitrogen incorporation in III-V dilute nitrides grown by rf nitrogen plasma assisted chemical beam epitaxy
- Physics, Materials Science
- 2006
We present a study on the impact of hydrogen upon the growth mode and structural and optical properties of GaAsN epilayers. Samples studied in this work were grown on (001) GaAs by radio frequency…
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- Materials Science, Physics
- 2007
Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH
- Materials ScienceNanoscale Research Letters
- 2018
The impact of the nitrogen precursur unsymmetrical dimethyl hydrazine (UDMH) on morphology was found to be overall beneficial as it strongly reduces tapering and leads to segments completely free of SFs, which are related to dislocations transverse to the growth direction.
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