Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides

  title={Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides},
  author={Irina A. Buyanova and Morteza Izadifard and Ivan G. Ivanov and Jens Birch and Weimin M. Chen and Marco Felici and Antonio Polimeni and M. Capizzi and Y. G. Hong and Huoping Xin and Charles W. Tu},
  journal={Physical Review B},
Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excita ... 
19 Citations

Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy

Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain

Hydrogenation of GaAs1−xNx and GaP1−xNx epilayers grown on GaAs(001) and GaP(001) surfaces, respectively, is known to passivate the electronic activity of nitrogen through the formation of specific

Effect of postgrowth hydrogen treatment on defects in GaNP

Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present

Calculation of optical response functions of dilute-N GaPAsN lattice-matched to Si

Dilute-N GaPAsN alloys have great potential for optoelectronics lattice-matched to Si. However, there is a lack of systematic calculation of the optical response of these alloys. The present paper

Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon

III–V/Si integration is one of the bottlenecks of modern semiconductor technology. Dilute nitride phosphides (III–P–N) are among the promising materials providing lattice matching with Si. In this

Hydrogen limited nitrogen incorporation in III-V dilute nitrides grown by rf nitrogen plasma assisted chemical beam epitaxy

We present a study on the impact of hydrogen upon the growth mode and structural and optical properties of GaAsN epilayers. Samples studied in this work were grown on (001) GaAs by radio frequency

Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

The impact of the nitrogen precursur unsymmetrical dimethyl hydrazine (UDMH) on morphology was found to be overall beneficial as it strongly reduces tapering and leads to segments completely free of SFs, which are related to dislocations transverse to the growth direction.



Hydrogen-induced improvements in optical quality of GaNAs alloys

Strong suppression of potential fluctuations in the band edges of GaNAs alloys due to postgrowth hydrogen treatment, which is accompanied by a reopening of the alloy band gap, is revealed from

Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys

We study the effect of hydrogen incorporation on the lattice properties of In xGa12xAs12yNy /GaAs heterostructures. The band gap widening observed in the photoluminescence spectra of hydrogenated

Nitrogen passivation induced by atomic hydrogen : The GaP1-yNy case

We report on the evolution of the optical properties of GaP1-yNy epilayers upon hydrogen irradiation for an extended nitrogen concentration range (y = 0.05% - 1.3%). For y = 0.6%, photoluminescence

Effects of hydrogen on the electronic properties of dilute GaAsN alloys.

At high Fermi energy and H concentration, a N complex with two H was found to have lower energy than the single-H configuration, and by removing the effect of N, this electrically inactive complex restores the gap of GaAs.

Structural properties of a GaNxP1−x alloy: Raman studies

Raman measurements in backscattering configuration are employed to characterize the effect of nitrogen on the structural properties of a GaNxP1−x alloy with x⩽3%. The following effects of N

Radiative recombination mechanism in GaNxP1−x alloys

Based on the results of temperature-dependent photoluminescence (PL) and absorption measurements, the PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures with N composition up

Experimental evidence for N-induced strong coupling of host conduction band states inGaNxP1−x: Insight into the dominant mechanism for giant band-gap bowing

Direct evidence for N-induced strong coupling of host conduction band (CB) states in GaNxP1-x is provided by photoluminescence excitation. It is manifested as: (1) a drastic change in the ratio of

Electronic Properties of Ga(In)NAs Alloys

A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective. The discussion is focused on

Global changes of the band structure and the crystal lattice of Ga(N, As) due to hydrogenation

The effect of hydrogenation on five GaN x As 1 - x epitaxial layers (0.00043≤x≤0.019) grown by metal-organic vapor-phase epitaxy was investigated. Photomodulated reflectance (PR) and

Structure and passivation effects of mono- and dihydrogen complexes in GaAsyN(1-y) alloys.

In GaAsyN(1-y), the presence of a few percent of N induces a large reduction of the GaAs band gap that vanishes upon hydrogenation, and a model is proposed that clarifies the passivation mechanism of nitrogen by H.