Direct comparison of fractional and integer quantized Hall resistance

  title={Direct comparison of fractional and integer quantized Hall resistance},
  author={Franz-Josef Ahlers and Martin G{\"o}tz and Klaus Pierz},
  pages={516 - 523}
We present precision measurements of the fractional quantized Hall effect, where the quantized resistance R[1/3] in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance R[2], represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAs-based devices located in two cryostats. A value of 1–(5.3  ±  6… 
Direct comparison of 1 MΩ quantized Hall array resistance and quantum Hall resistance standard
We report precision measurements of a 1 MΩ quantum Hall resistance array made of GaAs/AlGaAs heterostructure. The quantized Hall array resistance at filling factor 2 is directly compared with the
Precision measurement of the quantized anomalous Hall resistance at zero magnetic field
In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to
Tensor Network Wavefunctions for Topological Phases
Author(s): Ware, Brayden Alexander | Advisor(s): Bauer, Bela; Nayak, Chetan | Abstract: The combination of quantum effects and interactions in quantum many-body systems can result in exotic phases
Quantum Hall Effect, the SI Ohm, and the SI Farad
  • Physics
    The New International System of Units (SI)
  • 2019


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