Direct chemical vapor deposition growth of WS2 atomic layers on hexagonal boron nitride.

@article{Okada2014DirectCV,
  title={Direct chemical vapor deposition growth of WS2 atomic layers on hexagonal boron nitride.},
  author={Mitsuhiro Okada and Takumi Sawazaki and Kenji Watanabe and Takashi Taniguch and Hiroki Hibino and Hisanori Shinohara and Ryo Kitaura},
  journal={ACS nano},
  year={2014},
  volume={8 8},
  pages={8273-7}
}
Atomically thin transition metal dichalcogenides (TMDCs) have attracted considerable interest owing to the spin-valley coupled electronic structure and possibility in next-generation devices. Substrates are one of the most important factors to limit physical properties of atomic-layer materials, and among various substrates so far investigated, hexagonal boron nitride (hBN) is the best substrate to explore the intrinsic properties of atomic layers. Here we report direct chemical vapor… CONTINUE READING
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