Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

  title={Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal},
  author={Kenji Watanabe and Takashi Taniguchi and Hisao Kanda},
  journal={Nature Materials},
The demand for compact ultraviolet laser devices is increasing, as they are essential in applications such as optical storage, photocatalysis, sterilization, ophthalmic surgery and nanosurgery. Many researchers are devoting considerable effort to finding materials with larger bandgaps than that of GaN. Here we show that hexagonal boron nitride (hBN) is a promising material for such laser devices because it has a direct bandgap in the ultraviolet region. We obtained a pure hBN single crystal… 

Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications.

The investigation shows that the defective h-BN has a wide absorption band from visible to near infrared regimes, and first-principle calculations indicate that optical property changes may be attributed to the boron-vacancy-related defects.

Hexagonal Boron Nitride as a New Ultraviolet Luminescent Material and Its Application

Hexagonal boron nitride (hBN), which is conventionally used as one of the best-known heat-resistant materials due to its high thermal and chemical stability, has recently been found as a highly

Unraveling the optical properties of hexagonal boron nitride

Hexagonal boron nitride (hBN) is a wide bandgap semiconductor. Owing to its low dielectric constant, high thermal conductivity, and chemical inertness, hBN is used in a large range of basic

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

Since the successful demonstration of a blue light-emitting diode (LED)1, potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands

Optical gap and optically active intragap defects in cubic BN

We report a comprehensive study on the optical properties of cubic boron nitride (c-BN) and its optically active defects. Using electron energy-loss spectroscopy (EELS) within a monochromated

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for

AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics.

By exploiting the acceptor-like boron vacancy formation, it is demonstrated that h-BN can function as a highly conductive, DUV-transparent electrode and the first Al(Ga)N/h-BN LED, which exhibits strong emission at ∼210 nm, is demonstrated.

Photoluminescence and electronic transitions in cubic silicon nitride

The results indicate that γ-Si3N4 has a potential for fabrication of robust and efficient photonic emitters and a high efficiency of the electric power transformation in light in defect-free crystals.

Charge carrier transport properties in layer structured hexagonal boron nitride

Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for



Optical properties of hexagonal boron nitride

Optical absorption, reflectivity, and photoconductivity in the near-uv range (1950-3200 \AA{}) of a thin film of hexagonal boron nitride were measured. The main absorption peak was observed at 6.2

Optical properties of pyrolytic boron nitride in the energy range 0.05-10 eV

Optical reflectance studies of the c face of pyrolytic boron nitride were carried out at room temperature in the photon energy range 0.045-10 eV. A Kramers-Kronig analysis was performed to determine

Observation of near‐band‐gap luminescence from boron nitride films

We report results from cathodoluminescence spectroscopy of boron nitride films grown on Si(100) substrates by ion‐source‐assisted magnetron sputtering of a hexagonal BN target. Three main peaks are

Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a

Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition

Polycrystalline boron nitride (BN) films are synthesized using BCl3 and N2 as source gases, by plasma-assisted chemical vapor deposition. BN films consist of nanocrystalline grains of 3 nm in size.

Calculation of ground-state and optical properties of boron nitrides in the hexagonal, cubic, and wurtzite structures.

  • XuChing
  • Physics, Materials Science
    Physical review. B, Condensed matter
  • 1991
It is argued that the assessment of the accuracy of the conduction-band states should rely mainly on the reproduction of major structures in the optical-absorption curves rather than on the size of the band gap.