Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

@article{Watanabe2004DirectbandgapPA,
  title={Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal},
  author={Kenji Watanabe and Takashi Taniguchi and Hisao Kanda},
  journal={Nature Materials},
  year={2004},
  volume={3},
  pages={404-409}
}
The demand for compact ultraviolet laser devices is increasing, as they are essential in applications such as optical storage, photocatalysis, sterilization, ophthalmic surgery and nanosurgery. Many researchers are devoting considerable effort to finding materials with larger bandgaps than that of GaN. Here we show that hexagonal boron nitride (hBN) is a promising material for such laser devices because it has a direct bandgap in the ultraviolet region. We obtained a pure hBN single crystal… 

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It is argued that the assessment of the accuracy of the conduction-band states should rely mainly on the reproduction of major structures in the optical-absorption curves rather than on the size of the band gap.