Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

@inproceedings{Tran2015DirectGA,
  title={Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate},
  author={Binh Tinh Tran and Hideki Hirayama and Noritoshi Maeda and Masafumi Jo and Shiro Toyoda and Norihiko Kamata},
  booktitle={Scientific reports},
  year={2015}
}
High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-μm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force… CONTINUE READING
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The authors declare no competing financial interests

  • Liang, H. et al. Growth Techniques to Reduce V-defect Densit GaN, +6 authors commended the manuscript. Additional Information Competing f interests
  • How to cite this article: Tran, B. T. et al…
  • 2015

Effect of Multiple AlN Layers on Quality of GaN Films

  • Tran, T B.
  • Grown on Si Substrates. Electron. Mater. Lett. 10…
  • 2014

Effect of Multiple AlN Layers on Quality of GaN Films Grown on Si Substrates

  • B. T. Tran
  • Electron . Mater . Lett .
  • 2014

Growth Techniques to Reduce V - defect Density in GaN and AlGaN Layers Grown on 200 mm Si ( 111 ) Substrate

  • H. Liang
  • physica status solidi ( c )
  • 2014

MBE-Grown AlN-on-Si with Improved Crystalline Quality by Using Silicon-on-Insulator Substrates

  • N Lang
  • Appl. Phys. Express
  • 2014

AlxGa 1 − xN - Based Solar - Blind Ultraviolet Photodetector Based on Lateral Epitaxial Overgrowth of AlN on Si Substrate

  • E. Cicek
  • Appl . Phys . Lett .
  • 2013

AlxGa1−xN-Based Solar-Blind Ultraviolet Photodetector

  • E Cicek
  • Based on Lateral Epitaxial Overgrowth of AlN on…
  • 2013

Controlled Coalescence of MOVPE Grown AlN During Lateral Overgrowth

  • V Kueller
  • J. Cryst. Growth 368,
  • 2013

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