Direct Enrichment of Metallic Single-Walled Carbon Nanotubes by Using NO2 as Oxidant to Selectively Etch Semiconducting Counterparts.


We report an efficient method for enriching high-purity metallic single-walled carbon nanotubes (m-SWCNTs) by using NO2 as oxidant to remove semiconducting components at 220 °C. After etching, m-SWCNTs with purity higher than 90% were obtained. The surviving m-SWCNTs retain an intact structure without any extra defects on their surface. 


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