Dirac point movement and topological phase transition in patterned graphene.
@article{Dvorak2015DiracPM,
title={Dirac point movement and topological phase transition in patterned graphene.},
author={Marc Dvorak and Zhigang Wu},
journal={Nanoscale},
year={2015},
volume={7 8},
pages={
3645-50
}
}The honeycomb lattice of graphene is characterized by linear dispersion and pseudospin chirality of fermions on the Dirac cones. If lattice anisotropy is introduced, the Dirac cones stay intact but move in reciprocal space. Dirac point movement can lead to a topological transition from semimetal to semiconductor when two inequivalent Dirac points merge, an idea that has attracted significant research interest. However, such movement normally requires unrealistically high lattice anisotropy…
12 Citations
Movement of Dirac points and band gaps in graphyne under rotating strain
- PhysicsNano Research
- 2017
The introduction of lattice anisotropy causes Dirac cones to shift in response to the applied strain, leaving a pseudogap at the original Dirac points. Here, a group-theory analysis is combined with…
Engineering Dirac states in graphene: Coexisting type-I and type-II Floquet-Dirac fermions
- PhysicsPhysical Review B
- 2019
The coupling of monochromatic light fields and solids introduces nonequilibrium Floquet states, offering opportunities to create and explore new topological phenomena. Using combined first-principles…
Floquet–Dirac fermions in monolayer graphene by Wannier functions
- PhysicsJournal of physics. Condensed matter : an Institute of Physics journal
- 2021
The atomic-laser periodic effect is introduced to explain the different Floquet–Bloch bands between the LGFT and AGFT and shows that linearly polarized laser could effectively manipulate the properties of the Dirac fermions in graphene.
Effect of surface doping on the band structure of graphene: a DFT study
- PhysicsJournal of Materials Science: Materials in Electronics
- 2015
Abstract
Various techniques, like doping, vacancy creation, strain engineering are tried to open a gap in the bandstructure of graphene and in some cases the gap has opened up. However, when the gap…
Symmetry induced semimetal-semiconductor transition in doped graphene
- Materials ScienceScientific reports
- 2016
This investigation reveals for the first time that the symmetry of defect islands and the periodicity of defect modulation limit the phase cancellation which controls the semimetal-semiconductor transition in doped graphene.
Effect of multiple defects and substituted impurities on the band structure of graphene: a DFT study
- Physics, Materials ScienceJournal of Materials Science: Materials in Electronics
- 2016
In graphene, band gap opening and tuning are important technological challenges for device applications. Various techniques have been suggested to this technologically complicated problem. Here, we…
Proximity exchange induced gap opening and topological feature in graphene/1T'-MX2 (M = Mo,W; X = S,Se,Te) Dirac heterostructures.
- PhysicsJournal of physics. Condensed matter : an Institute of Physics journal
- 2018
By using first-principles calculations, we demonstrate the influence of proximity effect on the band structures of heterostructures formed by graphene stacking on a two dimensional (2D) topological…
Cubic Hafnium Nitride: A Novel Topological Semimetal Hosting a 0-Dimensional (0-D) Nodal Point and a 1-D Topological Nodal Ring
- Materials ScienceFrontiers in Chemistry
- 2020
This work promises that cubic-type hafnium nitride can serve as a superior topological semimetal with high stability, excellent mechanical properties, and rich topological states.
Unique topological nodal line states and associated exceptional thermoelectric power factor platform in Nb3GeTe6 monolayer and bulk.
- PhysicsNanoscale
- 2020
This work not only reports the discovery of a novel TNL material, but also builds the link between the TNL and thermoelectric properties for the 2D Nb3GeTe6 monolayer.
References
SHOWING 1-10 OF 37 REFERENCES
Creating, moving and merging Dirac points with a Fermi gas in a tunable honeycomb lattice
- PhysicsNature
- 2012
The creation of Dirac points with adjustable properties in a tunable honeycomb optical lattice is reported and the unique tunability of the lattice potential is exploited to adjust the effective mass of the Dirac fermions by breaking inversion symmetry.
Dirac-point engineering and topological phase transitions in honeycomb optical lattices
- Physics
- 2008
We study the electronic structure and the phase diagram of non-interacting fermions confined to hexagonal optical lattices. In the first part, we compare the properties of Dirac points arising in the…
Anisotropic behaviours of massless Dirac fermions in graphene under periodic potentials
- Physics
- 2008
The propagation of charge carriers in graphene under an imposed periodic potential can become strongly anisotropic, suggesting a way of making electronic circuits with appropriately patterned surface…
Geometrically induced transitions between semimetal and semiconductor in graphene
- Physics
- 2014
How the long-range ordering and local defect configurations modify the electronic structure of graphene remains an outstanding problem in nanoscience, which precludes the practical method of…
Bandgap Opening by Patterning Graphene
- PhysicsScientific reports
- 2013
The analytic rule of gap-opening by patterning graphene is derived, which indicates that if a modified graphene is a semiconductor, its two corresponding carbon nanotubes, whose chiral vectors equal graphene's supercell lattice vectors, are both semimetals.
The electronic properties of graphene
- Physics
- 2009
This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be…
Bandgap opening in graphene induced by patterned hydrogen adsorption.
- PhysicsNature materials
- 2010
The existence of a bandgap opening in graphene is demonstrated, induced by the patterned adsorption of atomic hydrogen onto the Moiré superlattice positions of graphene grown on an Ir(111) substrate.
Interaction-induced merging of Dirac points in non-Abelian optical lattices
- Physics
- 2013
We study the properties of an ultracold Fermi gas loaded in a square optical lattice and subjected to an external and classical non-Abelian gauge field. We calculate the energy spectrum of the system…
Universal rule on chirality-dependent bandgaps in graphene antidot lattices.
- PhysicsSmall
- 2013
This chirality-dependent bandgap in triangular GALs is found to be a generic behavior in any parallelogram GAL and thus serves as an essential stepping stone for experimenters to realize graphene devices by antidot engineering.
Colloquium : Topological insulators
- Physics
- 2010
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. These states are possible due to…




