Dirac four-potential tunings-based quantum transistor utilizing the Lorentz force

@article{Trisetyarso2012DiracFT,
  title={Dirac four-potential tunings-based quantum transistor utilizing the Lorentz force},
  author={Agung Trisetyarso},
  journal={Quantum Inf. Comput.},
  year={2012},
  volume={12},
  pages={989-1010}
}
We propose a mathematical model of quantum transistor in which bandgap engineering corresponds to the tuning of Dirac potential in the complex four-vector form. The transistor consists of n-relativistic spin qubits moving in classical external electromagnetic fields. It is shown that the tuning of the direction of the external electromagnetic fields generates perturbation on the potential temporally and spatially, determining the type of quantum logic gates. The theory underlying of this scheme… 

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