Dipole trap model for the metal-insulator transition in gated silicon-inversion layers

@article{Hormann2010DipoleTM,
  title={Dipole trap model for the metal-insulator transition in gated silicon-inversion layers},
  author={Thomas Hormann and Gerhard Brunthaler},
  journal={Physical Review B},
  year={2010},
  volume={82},
  pages={205310}
}
In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Altshuler and D.L. Maslov [Phys. Rev. Lett.\ 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. It turns out that a pronounced metallic state can… 

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