Diode-pumped 1.5-1.6 μm laser operation in Er³⁺ doped YbAl₃(BO₃)₄ microchip.

Abstract

Er3+ doped YbAl3(BO3)4 crystal with large absorption coefficient of 184 cm(-1) at pump wavelength of 976 nm is a promising microchip gain medium of 1.5-1.6 μm laser. End-pumped by a 976 nm diode laser, 1.5-1.6 μm continuous-wave laser with maximum output power of 220 mW and slope efficiency of 8.1% was obtained at incident pump power of 4.54 W in a c-cut… (More)
DOI: 10.1364/OE.22.013969

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Cite this paper

@article{Chen2014Diodepumped1, title={Diode-pumped 1.5-1.6 μm laser operation in Er³⁺ doped YbAl₃(BO₃)₄ microchip.}, author={Yujin Chen and Yanfu Lin and Yuqi Zou and Jianhua Huang and Xinghong Gong and Zundu Luo and Yidong Huang}, journal={Optics express}, year={2014}, volume={22 11}, pages={13969-74} }