Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs

@article{Hyvonen2005DiodebasedTE,
  title={Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs},
  author={Sami Hyvonen and Elyse Rosenbaum},
  journal={2005 Electrical Overstress/Electrostatic Discharge Symposium},
  year={2005},
  pages={1-9}
}
CMOS diodes are evaluated in terms of figure-of-merit (It2/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA. 
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