Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM

@article{Dorrance2013DiodeMTJCM,
  title={Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM},
  author={Richard Dorrance and J. G. Alzate and S. Cherepov and Pramey Upadhyaya and I. N. Krivorotov and J. Katine and Jurgen Langer and K. L. Wang and P. Khalili Amiri and Dejan Markovic},
  journal={IEEE Electron Device Letters},
  year={2013},
  volume={34},
  pages={753-755}
}
This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching… CONTINUE READING
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Voltage-induced switching in magnetic tunnel junctions with perpendicular magnetic anisotropy

  • W. G. Wang, C. L. Chien
  • J. Phys. D, Appl. Phys., vol. 46, no. 7, p…
  • 2013
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