Diluted II-VI oxide semiconductors with multiple band gaps.

@article{Yu2003DilutedIO,
  title={Diluted II-VI oxide semiconductors with multiple band gaps.},
  author={Kin Man Yu and W. Walukiewicz and Jian Wu and Wenwen Shan and Jeffrey W. Beeman and Michael A. Scarpulla and Oscar D. Dubon and Piotr Becla},
  journal={Physical review letters},
  year={2003},
  volume={91 24},
  pages={
          246403
        }
}
We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two… CONTINUE READING

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