Dilute nitrides and 1.3 µm GaInNAs quantum well lasers on GaAs

Abstract

We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71mm at 300K. High quality 1.3mm GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 10

DOI: 10.1016/j.mejo.2008.06.013

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Cite this paper

@article{Wang2009DiluteNA, title={Dilute nitrides and 1.3 µm GaInNAs quantum well lasers on GaAs}, author={S. M. Wang and H. Zhao and G. Adolfsson and Y. Q. Wei and Q. X. Zhao and J. S. Gustavsson and M. Sadeghi and A. Larsson}, journal={Microelectronics Journal}, year={2009}, volume={40}, pages={386-391} }