Diffusivity of the double negatively charged mono-vacancy in silicon.

Abstract

Lightly-doped silicon (Si) samples of n-type conductivity have been irradiated with 2.0 MeV [Formula: see text] ions at a temperature of 30 K and characterized in situ by deep level transient spectroscopy (DLTS) measurements using an on-line setup. Migration of the Si mono-vacancy in its double negative charge state (V 2-) starts to occur at temperatures… (More)
DOI: 10.1088/1361-648X/aa693f

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