Diffusion of degenerate minority carriers in a p-type semiconductor

@article{Weber2013DiffusionOD,
  title={Diffusion of degenerate minority carriers in a p-type semiconductor},
  author={Christopher Phillip Weber and Eric A. Kittlaus},
  journal={Journal of Applied Physics},
  year={2013},
  volume={113},
  pages={053711}
}
  • C. Weber, E. Kittlaus
  • Published 6 February 2013
  • Materials Science, Physics
  • Journal of Applied Physics
We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2  ×  1016 to 6  ×  1017 cm−3. After the first few picoseconds, the grating decays primarily due to ambipolar diffusion. While, at low density, we observe a regime in which the ambipolar diffusion is electron-dominated and increases rapidly with n, it appears to saturate at 34 cm2/s… 
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References

SHOWING 1-10 OF 30 REFERENCES
Optical monitoring of nonequilibrium carrier diffusion in single crystalline CVD and HPHT diamonds under high optical excitation
We report on a novel approach for the contactless, all-optical study of ambipolar carrier diffusion in single-crystalline diamond layers. Using interband two-photon and single photon absorption (at
Subpicosecond thermalization and relaxation of highly photoexcited electrons and holes in intrinsic and p-type GaAs and InP.
TLDR
Very good agreement between theory and experiment is found for the transient-absorption bleachings and the band-gap luminescence as functions of time and doping.
Phonon-wind-driven transport of photoexcited carriers in a semiconductor quantum well.
TLDR
The expansion of the photoexcited carriers following a 6-ps pump pulse is found to be a strong function of excitation power and ambient temperature, and the power and temperature dependence suggests a phonon-wind driving mechanism.
Transport Properties of GaAs
The transport properties of the electrons in GaAs have been investigated; i.e., the absolute values of the electron drift velocity, the diffusion coefficient, and the trapping time have been measured
Temperature dependence of ambipolar diffusion in silicon on insulator
Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by
Carrier scattering and excitonic effects on electron-hole-pair diffusion in nondoped and p-type-modulation-doped GaAs/AlxGa1-x As quantum-well structures.
TLDR
Systematic measurements at various electron and hole densities revealed remarkable deviation from the conventional ambipolar diffusion, indicating the important contribution of carrier-carrier scattering and excitonic effects to the diffusion.
Majority and minority electron and hole mobilities in heavily doped GaAs
The majority electron and minority hole mobilities have been calculated in GaAs for donor densities between 5×1016 and 1×1019 cm−3. Similarly, the majority hole and minority electron mobilities have
Ultrafast Carrier Thermalization in InN
Carrier thermalization dynamics in heavily doped n-type InN was investigated at room temperature with a femtosecond transient transmission measurement. The dependence of hot carrier cooling time on
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