Diffusion of degenerate minority carriers in a p-type semiconductor

  title={Diffusion of degenerate minority carriers in a p-type semiconductor},
  author={Christopher Phillip Weber and Eric A. Kittlaus},
  journal={Journal of Applied Physics},
  • C. Weber, E. Kittlaus
  • Published 6 February 2013
  • Materials Science, Physics
  • Journal of Applied Physics
We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2  ×  1016 to 6  ×  1017 cm−3. After the first few picoseconds, the grating decays primarily due to ambipolar diffusion. While, at low density, we observe a regime in which the ambipolar diffusion is electron-dominated and increases rapidly with n, it appears to saturate at 34 cm2/s… 
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