Diffusion characteristics of silicon implanted with group IV elements

@inproceedings{Davy2007DiffusionCO,
  title={Diffusion characteristics of silicon implanted with group IV elements},
  author={Perry K Davy},
  year={2007}
}
Recently we reported [1] ordered spiral patterns of gold nanoclusters in silicon (100) substrates by Au ion implantation followed by thermal (furnace) annealing. This unique phenomenon was observed only above a critical threshold implantation dose and annealing temperature. High resolution SEM & TEM analysis showed two generations of Au nanoclusters of… CONTINUE READING