Dielectrically encapsulated trench capacitor cell

@article{Taguchi1986DielectricallyET,
  title={Dielectrically encapsulated trench capacitor cell},
  author={Makoto Taguchi and Shin’ichiro Ando and Naoshi Higaki and Gensuke Goto and Takehiro Ema and K. Hashimoto and Takashi Yabu and Takeshi Nakano},
  journal={1986 International Electron Devices Meeting},
  year={1986},
  pages={136-139}
}
A DRAM cell with an improved trench structure, capacitor has been developed for 16M DRAMs. The capacitor is formed within a trench with polysilicon to polysilicon structure. Covering the storage electrode with the cell-plate makes this cell free from punch-through between adjacent cells. The whole capacitor is coverd with a dielectric layer and there is no… CONTINUE READING