# Dielectric response of Anderson and pseudogapped insulators

@article{Feigelman2018DielectricRO,
title={Dielectric response of Anderson and pseudogapped insulators},
author={Mikhail V. Feigel'man and Dmitri A. Ivanov and Emilio Cuevas},
journal={New Journal of Physics},
year={2018},
volume={20}
}
• Published 16 November 2017
• Physics
• New Journal of Physics
Using a combination of analytic and numerical methods, we study the polarizability of a (non-interacting) Anderson insulator in one-, two-, and three-dimensions and demonstrate that, in a wide range of parameters, it scales proportionally to the square of the localization length, contrary to earlier claims based on the effective-medium approximation. We further analyze the effect of electron–electron interactions on the dielectric constant in quasi-1D, quasi-2D and 3D materials with large…
4 Citations

## Figures and Tables from this paper

Electron-phonon cooling power in Anderson insulators
• Physics
Physical Review B
• 2019
First microscopic theory for electron-phonon energy exchange in Anderson insulators is developed. The major contribution to the cooling power as a function of electron temperature is shown to be
Mott, Floquet, and the response of periodically driven Anderson insulators
• Physics
Physical Review B
• 2018
We consider periodically driven Anderson insulators. The short-time behavior for weak, monochromatic, uniform electric fields is given by linear response theory and was famously derived by Mott. We
Overactivated transport in the localized phase of the superconductor-insulator transition
• Physics
Nature communications
• 2021
An extensive experimental study on insulating NbxSi1−x close to the SIT, as well as corresponding numerical simulations of the electrical conductivity, shows that electronic transport is activated and dominated by charging energies at low temperatures.
Characterizing dielectric properties of ultra-thin films using superconducting coplanar microwave resonators.
• Physics
The Review of scientific instruments
• 2019
An experimental approach for cryogenic dielectric measurements on ultrathin insulating films using superconducting quarter-wave resonators with inductive coupling and a temperature-dependent measurement for a SrTiO3 bulk sample, using an in situ reference method to compensate for the temperature dependence of the superconductor properties.

## References

SHOWING 1-10 OF 32 REFERENCES
Interaction effects in disordered conductors near the metal–insulator transition
• Physics
• 1984
Abstract The dielectric screening of a disordered conductor is reviewed. The effects of interactions on the density of states (DOS) and the related dimensional cross-over in the weakly localized
Low-energy dynamical response of an Anderson insulator with local attraction
• Physics
• 2017
The low-frequency dynamical response of an Anderson insulator is dominated by so-called Mott resonances: hybridization of pairs of states close in energy, but separated spatially. We study the effect
Multifractality and quantum-to-classical crossover in the Coulomb anomaly at the Mott–Anderson metal–insulator transition
• Physics
• 2014
We study the interaction-driven localization transition, which a recent experiment (Richardella et al 2010 Science 327 665) in Ga1−xMnxAs has shown to come along with the multifractal behavior of the
Eigenfunction fractality and pseudogap state near the superconductor-insulator transition.
• Physics
Physical review letters
• 2007
We develop a theory of a pseudogap state appearing near the superconductor-insulator (SI) transition in strongly disordered metals with an attractive interaction. We show that such an interaction
Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz
• Physics
• 1999
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the
Dielectric anomalies near the Anderson metal-insulator transition
• Physics
• 1982
The linear-response expressions for the dielectric constant and conductivity as functions of wave number and frequency are evaluated near the localization metal-insulator transition for
Inhomogeneous pairing in highly disordered s-wave superconductors
• Physics
• 2001
We study a simple model of a two-dimensional s-wave superconductor in the presence of a random potential as a function of disorder strength. We first use the Bogoliubov--de Gennes (BdG) approach to
Frequency-dependent conductivity of electron glasses
• Physics, Materials Science
• 2004
Results of dc and frequency-dependent conductivity in the quantum limit---i.e., $\ensuremath{\Elzxh}\ensuremath{\omega}g{k}_{B}T$---for a broad range of dopant concentrations in nominally
Conduction in non-crystalline systems
Abstract The present author (1967, 1968) has used the work of Anderson (1958) to deduce that under certain conditions the conductivity due to a degenerate gas of electrons in a disordered lattice