• Corpus ID: 248862938

Dielectric constant of gray Tin: A first-principles study

@inproceedings{Duan2022DielectricCO,
  title={Dielectric constant of gray Tin: A first-principles study},
  author={Jinsong Duan},
  year={2022}
}
α -Sn (gray tin) is a group-IV, zero-gap semiconductor with potential use in infrared detectors, necessitating a clear understanding of its dielectric properties. We report the first-principles calculations of the band structure and dielectric function of α -Sn using density functional theory, emphasizing the effects of strain, spin-orbit interaction, and pseudo-potentials on the electronic and optical properties of α -Sn in the infrared region (photon energy < 1eV). In α -Sn, spin-orbit coupling… 
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References

SHOWING 1-10 OF 34 REFERENCES
The direct bandgap of gray α-tin investigated by infrared ellipsometry
Using Fourier-transform infrared ellipsometry, the authors provide spectroscopic evidence about the valence band (VB) structure of diamond-like α-tin. The mid-infrared dielectric function of α-tin
BAND STRUCTURE OF GRAY TIN
In this Letter a new model for the band structure of n-Sn is proposed which is compatible with the experimental results reported on this material and particularly with the measurements of
Elemental topological insulator with tunable Fermi level: strained α-Sn on InSb(001).
TLDR
The epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb and the precise control of the Fermi level by dopants are demonstrated.
Structural and electronic properties of α-tin nanocrystals from first principles
The $\ensuremath{\alpha}$ phase of tin is a zero-gap semiconductor with an inverted band structure with respect to other group-IV elements like Ge. The ${\ensuremath{\Gamma}}_{6c}$ states lie
Optical properties of a-Sn
A method is described for calculation of the real (e1) and imaginary (e2) parts of the dielectric function of α‐Sn at temperatures of 296 and 100 K in the entire range of photon energies (0–6.0 eV),
Nonlocality and many-body effects in the optical properties of semiconductors.
TLDR
Numerical calculations of the frequency-dependent dielectric function for different gauges of the electromagnetic field in the optical transition operator are reported and results for optical spectra where the many-body quasiparticle effect is included beyond the scissors-operator approximation are presented.
Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites
TLDR
Calculating the polarization in time from finite temperature molecular dynamics, it is shown that at room temperature this does not change and is argued in favor of the formation of polarons.
Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells.
  • Chao, Chuang
  • Physics
    Physical review. B, Condensed matter
  • 1992
TLDR
This work shows how the strain deforms the constant energy surface in k space and compares the subband structure calculated with and without the split-off bands, demonstrating that the spin-orbit coupling has significant effects on the band structure especially for highly strained quantum wells and cannot be ignored.
Heyd-Scuseria-Ernzerhof hybrid functional for calculating the lattice dynamics of semiconductors
We present an ab initio study of the lattice dynamics of group-IV elemental semiconductors and insulators using a finite differences approach. The investigated solids include cubic diamond (C),
The stability of α-Sn grown on CdTe by molecular beam epitaxy
We have examined the effect of the substrate orientation, thickness, growth rate, substrate temperature and inclusion of small amounts of Ge on the transition temperature of α-Sn films grown on CdTe.
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