Dielectric Breakdown in Underoxidized Magnetic Tunnel Junctions: Dependence on Oxidation Time and Area

Magnetic tunnel junctions (MTJs) with partially oxidized 9-Aring AlOx-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric breakdown in such underoxidized MTJs, focusing on its dependence on tunnel junction area and oxidation time. A clear relation… CONTINUE READING

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